? 2003 ixys all rights reserved features ? international standard package ? minibloc, with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 1200 v v gh(th) v ds = v gs , i d = 8 ma 2.5 4.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.75 ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1200 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c, chip capability 20 a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c10a e ar t c = 25 c40mj e as t c = 25 c2j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 780 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g hiperfet tm power mosfets n-channel enhancement mode avalanche rated, high dv/dt, low t rr ds99116(11/03) d s g s s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source ixfn 20n120 v dss = 1200 v i d25 = 20 a r ds(on) = 0.75 ? ? ? ? ? t rr 300 ns advanced technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 ixfn 20n120 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 , pulse test 15 27 s c iss 7400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 560 pf c rss 100 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 45 ns t d(off) r g = 1 ? (external), 75 n s t f 20 ns q g(on) 160 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 35 nc q gd 60 nc r thjc 0.16 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 20 a i sm repetitive; 80 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 300 n s q rm 1.4 c i rm 8a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
? 2003 ixys all rights reserved ixfn 20n120 fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 v d s - volts i d - amperes v gs = 10v 6v 4v 5v fig. 2. output characteristics @ 125 deg. c 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 35 40 v d s - volts i d - amperes v gs = 10v 5v 4v fig. 3. r ds(on) norm alized to i d25 v alue vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 20a i d = 10a v gs = 10v fig. 6. input adm ittance 0 5 10 15 20 25 30 33.5 44.5 55.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 5. drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 4. r ds(on) norm alized to i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 5 10 15 20 25 30 35 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 ixfn 20n120 fig. 10. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 600v i d = 10a i g = 10ma fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 11. maxim um transient therm al resistance 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w)
|
